Nanoelectronics and photonics

• We specialize in planar and nanostructured III-V semiconductors for applications in both the visible and infrared ranges. Utilizing molecular beam epitaxy (MBE), we synthesize III-V semiconductors (including As, P, Sb, and Bi) on binary compound substrates. We then investigate their structures using X-ray diffraction (XRD) and atomic force microscopy (AFM), as well as their optical properties through photoluminescence (PL) studies.
• Organic and hybrid semiconductor systems enable tunable optoelectronic properties through molecular design and interface engineering, facilitating advanced applications in photodetection, energy harvesting, and optical sensing technologies.
• Semiconductor surfaces and interfaces, in situ spectromicroscopy studies using Synchrotron radiation based on X-ray photoelectron spectroscopy (XPS), low-energy electron microscopy (LEEM), X-ray photoemission electron microscopy (XPEEM), and related techniques.