@article{Sopitpan1997,

title = {Photoluminescence spectra of shadow masked multiple quantum wells},

author = {S Sopitpan and P Cheewatas and S Thainoi and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-17144450873&doi=10.1016%2fS0022-0248%2896%2901220-1&partnerID=40&md5=cd561db149b1e087160087a84ea6b913},

doi = {10.1016/S0022-0248(96)01220-1},

issn = {00220248},

year  = {1997},

date = {1997-01-01},

journal = {Journal of Crystal Growth},

volume = {175-176},

number = {PART 2},

pages = {1152-1156},

publisher = {Elsevier},

abstract = {Lines of local epitaxy of GaAs/GaAlAs multiple quantum wells with linewidth of 7 and 5 μm having line separation of 250 μm were fabricated by molecular beam epitaxy (MBE) using shadow masking technique. Photoluminescence (PL) measurements at 10 K were performed by using an argon laser with cylindrical lens producing line focus and with circular lens producing point focus for the excitation. The focussed line and focussed point of laser beam were ∼100 μm and could be aligned to the stripes of MQW. The PL spectrum characteristics reflect the quantum well structure as well as the crystal quality of shadow masked epitaxy layers. The PL spectrum shows double PL peaks at 758 and 774 nm with nearly equal intensity when the exciting beam lined parallel to the stripes of MQW have a 7 μm window and quantum well width of 30 monolayers. Overlapping PL peaks at 810 and 818 nm were observed from MQW having 5 μm window and quantum well width of 60 monolayers. Similar results were obtained by point focussed laser beam and by line focussed laser beam at perpendicular configuration. A stronger PL peak at 818 nm was clearly emphasized by strip-off MQW samples having 5 μm stripes. The PL peak from a shadow masked MQW sample was sharp having spectral FWHM of 14 nm and was relatively stronger than that obtained from conventional MQW samples. These experimental data indicated that MBE grown MQW mesa using shadow masking technique is suitable for quantum device fabrication.},

note = {cited By 1},

keywords = {},

pubstate = {published},

tppubtype = {article}

}