@article{Kruangam2000,

title = {Amorphous photocoupler consisting of a-SiC:H thin film light emitting diode and a-SiGe:H thin film photodiode},

author = {D Kruangam and F Wongwan and T Chutarasok and K Chirakawikul and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0346482203&doi=10.1016%2fs0022-3093%2899%2900931-x&partnerID=40&md5=4cb7a019d9a6341de53ebf9f242b4353},

doi = {10.1016/s0022-3093(99)00931-x},

issn = {00223093},

year  = {2000},

date = {2000-01-01},

journal = {Journal of Non-Crystalline Solids},

volume = {266-269 B},

pages = {1241-1246},

publisher = {Elsevier},

address = {Snowbird, UT},

abstract = {Hydrogenated amorphous silicon germanium (a-SiGe:H) thin films having the optical energy gap between 1.4-1.6 eV were prepared by the plasma enhanced chemical vapor deposition (PECVD) method. The photoconductivity of the a-SiGe:H increased from (2.1 ± 0.5) × 10-7 to (1.1 ± 0.5) × 10-5 S/cm by increasing the flow rate of hydrogen gas as well as increasing the substrate temperature from 190°C to 250°C. The a-SiGe:H was applied to the carrier generating layer in an infrared light film photodiode. The film photodiode has the structure of glass/indium tin oxide/SnO2/ p-a-SiC:H/i-a-SiGe:H/n-nc-Si:H/Al. The a-SiGe:H photodiodes can be operated at room temperature and have a greater response to infrared light from 700 to 900 nm wavelength than that of the conventional a-Si:H photodiode. Furthermore, the a-SiGe:H photodiodes are applied as the photodetector in an amorphous photocoupler in which the small optical energy gap of a-SiC:H thin film light emitting diode (TFLED) is the light emitting device. © 2000 Elsevier Science B.V. All rights reserved.},

note = {cited By 8; Conference of 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference Date: 23 August 1999 Through 27 August 1999; Conference Code:56935},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kruangam1998,

title = {Novel amorphous silicon alloy optoelectronic integrated circuits},

author = {D Kruangam and T Sujaridchai and K Chirakawikul and B Ratwises and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032066992&doi=10.1016%2fS0022-3093%2898%2900208-7&partnerID=40&md5=51def547b583f3e8b503e53847429350},

doi = {10.1016/S0022-3093(98)00208-7},

issn = {00223093},

year  = {1998},

date = {1998-01-01},

journal = {Journal of Non-Crystalline Solids},

volume = {227-230},

number = {PART 2},

pages = {1146-1150},

publisher = {Elsevier},

abstract = {Novel amorphous Si alloy optoelectronic integrated circuits (OEICs) were developed. The basic elements used in the amorphous OEICs were a-SiC:H p-i-n thin film light emitting diodes, dielectric optical waveguides, a-Si:H p-i-n thin film photodiodes. These elements were constructed both in the lateral and vertical configurations. It was shown that a glass substrate with a textured-surface could be used as an optical waveguide as well as a distributed Bragg reflector for amorphous OEICs. © 1998 Elsevier Science B.V. All rights reserved.},

note = {cited By 6},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Manmontri1998,

title = {Study on GaAs/GaAlAs MQW structure for photovoltaic applications},

author = {U Manmontri and S Sopitpan and P Cheewatas and S Thainoi and S Rattanathammapan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031699482&doi=10.1016%2fS0927-0248%2897%2900157-8&partnerID=40&md5=25631c0a6a815e02d4af22c5fbbb9c57},

doi = {10.1016/S0927-0248(97)00157-8},

issn = {09270248},

year  = {1998},

date = {1998-01-01},

journal = {Solar Energy Materials and Solar Cells},

volume = {50},

number = {1-4},

pages = {265-272},

publisher = {Elsevier},

abstract = {GaAs/GaAlAs MQW structures with varying well widths having narrowest wells on the top layers and gradually wider wells for the inner layers were studied and confirmed by Auger spectroscopy and photoluminescence measurements. Multiplication of quantum wells gives stronger photoluminescence due to higher density of quantized states in the structure. This MQW structure was experimented in the photoconductivity and photocurrent measurements at room temperature. It is found that at low multiplication of quantum wells in MQW structure, the photoconductivity effect was mainly controlled by bulk material as shown in the spectral response. Photocurrent at low bias voltage shows relatively better spectral sensitivity at shorter wavelength. The photoconductivity and photocurrent measurements indicate that appropriate MQW structures acting as broader absorbers due to graded characters of quantized energy states are needed for photovoltaic application. Integration of MQW structure to solar cell structure was also investigated.},

note = {cited By 1},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Chirakawikul1998,

title = {Preparation of p-type poly crystalline diamond films and their applications to hole injection layers in amorphous SiC:H thin film light emitting diodes},

author = {K Chirakawikul and T Sujaridchai and B Ratwises and D Kruangam and S Panyakeow and W Boonkosum and T Sugino and J Shirafuji},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032065057&doi=10.1016%2fS0022-3093%2898%2900350-0&partnerID=40&md5=155124295788bfc6af6b973ad879ac08},

doi = {10.1016/S0022-3093(98)00350-0},

issn = {00223093},

year  = {1998},

date = {1998-01-01},

journal = {Journal of Non-Crystalline Solids},

volume = {227-230},

number = {PART 2},

pages = {1156-1159},

publisher = {Elsevier},

abstract = {P-type polycrystalline diamond films have been synthesized using methanol and diborane as reaction gases by the hot-filament chemical vapor deposition method. The DC conductivity was about 5 × 10-1 S/cm with hole mobility of 10 cm2/V s and hole density of about 3 × 1017 cm-3 at room temperature. The p-type diamond films were applied to the hole injection layers in the a-SiC:H thin film light emitting diodes (TFLEDs). The TFLEDs have the hetero-junctions of indium tin oxide (ITO)n-i-a-SiC:H/p-diamond/c-Si/Al. The light emission of red-orange color could be observed from the ITO side. The brightness was 0.01 to 1.5 cd/m2 at the injection current density of 10 to 100 mA/cm2. © 1998 Elsevier Science B.V. All rights reserved.},

note = {cited By 9},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Sopitpan1997,

title = {Photoluminescence spectra of shadow masked multiple quantum wells},

author = {S Sopitpan and P Cheewatas and S Thainoi and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-17144450873&doi=10.1016%2fS0022-0248%2896%2901220-1&partnerID=40&md5=cd561db149b1e087160087a84ea6b913},

doi = {10.1016/S0022-0248(96)01220-1},

issn = {00220248},

year  = {1997},

date = {1997-01-01},

journal = {Journal of Crystal Growth},

volume = {175-176},

number = {PART 2},

pages = {1152-1156},

publisher = {Elsevier},

abstract = {Lines of local epitaxy of GaAs/GaAlAs multiple quantum wells with linewidth of 7 and 5 μm having line separation of 250 μm were fabricated by molecular beam epitaxy (MBE) using shadow masking technique. Photoluminescence (PL) measurements at 10 K were performed by using an argon laser with cylindrical lens producing line focus and with circular lens producing point focus for the excitation. The focussed line and focussed point of laser beam were ∼100 μm and could be aligned to the stripes of MQW. The PL spectrum characteristics reflect the quantum well structure as well as the crystal quality of shadow masked epitaxy layers. The PL spectrum shows double PL peaks at 758 and 774 nm with nearly equal intensity when the exciting beam lined parallel to the stripes of MQW have a 7 μm window and quantum well width of 30 monolayers. Overlapping PL peaks at 810 and 818 nm were observed from MQW having 5 μm window and quantum well width of 60 monolayers. Similar results were obtained by point focussed laser beam and by line focussed laser beam at perpendicular configuration. A stronger PL peak at 818 nm was clearly emphasized by strip-off MQW samples having 5 μm stripes. The PL peak from a shadow masked MQW sample was sharp having spectral FWHM of 14 nm and was relatively stronger than that obtained from conventional MQW samples. These experimental data indicated that MBE grown MQW mesa using shadow masking technique is suitable for quantum device fabrication.},

note = {cited By 1},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Boonkosum1996,

title = {Amorphous SiO:H thin film visible light emitting diode},

author = {W Boonkosum and D Kruangam and B Ratwises and T Sujaridchai and S Panyakeow and S Fujikake and H Sakai},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-17144465729&doi=10.1016%2f0022-3093%2896%2900117-2&partnerID=40&md5=58cbca212659a2407c4319ee7466f26a},

doi = {10.1016/0022-3093(96)00117-2},

issn = {00223093},

year  = {1996},

date = {1996-01-01},

journal = {Journal of Non-Crystalline Solids},

volume = {198-200},

number = {PART 2},

pages = {1226-1229},

publisher = {Elsevier},

abstract = {Undoped hydrogenated amorphous silicon oxide (a-SiO:H) was applied to the luminescent i-layer in the p-i-n junction amorphous thin film visible light emitting diode (TFLED) for the first time. The brightness obtained from the a-SiO:H is low compared with the hydrogenated amorphous silicon carbide and silicon nitride. However, the TFLEDs having boron-doped highly conductive a-SiO:H and microcrystalline (μc) SiO:H as the p-layers have a higher brightness by a factor of 5 compared with those with conventional boron doped a-SiC:H as the p-layer.},

note = {cited By 11},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Lee1994,

title = {Hybrid air-electricity storage for PV system},

author = {J Lee and T Cholapranee and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028761558&doi=10.1016%2f0927-0248%2894%2990181-3&partnerID=40&md5=5a4cdf1db6aba0795f0af9cd475ba729},

doi = {10.1016/0927-0248(94)90181-3},

issn = {09270248},

year  = {1994},

date = {1994-01-01},

journal = {Solar Energy Materials and Solar Cells},

volume = {35},

number = {C},

pages = {515-520},

abstract = {Hybrid air-electricity storage for PV systems was designed and implemented. The system consists of 12 PV panels (0.5 kWp) with sun tracking, a 1/2 HP air pump, 4 × 1000 liter air tanks (pressure up to 100 psi), 4 × 100 AH batteries and an electronic control circuit. The system provides an air output at flow-rate ranging from 10 1/min. at 10 psi to 40 1/min. at 00 psi to oxygenate water for 24 h. Hybrid air-electricity storage gives higher performance of the PV system. The air product was increased by 30% compared with the system without batteries. Hybrid air-electricity storage for PV system with 2 × 1.2 kWp and manual control was demonstrated at a catfish farm to confirm its useful performance in the field. © 1994.},

note = {cited By 0},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Sriyudthsak1993,

title = {Effect of carrier gas on response of oxide semiconductor gas sensor},

author = {M Sriyudthsak and L Promsong and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027590801&doi=10.1016%2f0925-4005%2893%2985345-B&partnerID=40&md5=9189408c1d471a09f1b8b93b8ddb07e7},

doi = {10.1016/0925-4005(93)85345-B},

issn = {09254005},

year  = {1993},

date = {1993-01-01},

journal = {Sensors and Actuators: B. Chemical},

volume = {13},

number = {1-3},

pages = {139-142},

abstract = {It is known that response mechanism of an oxide semiconductor gas sensor based on a redox process occurs at the surface of the sensor. The present investigation used an alcohol gas sensor made of tin oxide as an example to demonstrate the role of oxygen molecules in carrier gases on the response of the sensor. It is found that high concentration of oxygen in the carrier gases reduced the sensor recovery time and background conductance, and enhanced its dynamic range and linearity of measurement. These results can be explained by a reaction model of oxidation by oxygen and reduction by reducing gas at the surface of the sensor. © 1993.},

note = {cited By 14},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kruangam1993,

title = {Visible thin film light emitting diode using a-SiN:H/a-SiC:H heterojunctions},

author = {D Kruangam and W Boonkosum and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027906992&doi=10.1016%2f0022-3093%2893%2991120-R&partnerID=40&md5=bbf8e429ae5eab661778e48048e36d11},

doi = {10.1016/0022-3093(93)91120-R},

issn = {00223093},

year  = {1993},

date = {1993-01-01},

journal = {Journal of Non-Crystalline Solids},

volume = {164-166},

number = {PART 2},

pages = {809-812},

abstract = {A visible a-SiN:H/a-SiC:H heterojunction thin film light emitting diode (TFLED) has been developed. The TFLED has a structure of glass/ITO/p a-SiC:H (2.0 eV)/i a-SiN:H (2.4-4.0 eV)/n a-SiC:H (2.0 eV)/A1. The thickness of the p-i-n layers are 150 Å, 200-1000 Å and 300 Å, respectively. The results have shown that the optimized thickness of the i-layer is approximately 500 Å, and the emitting color can be changed from red, yellow, green to white-blue as the optical energy gap of the i-layer is increased. The brightness of the TFLEDS is mostly constant under the pulse-mode operation in the frequency range of dc-1 MHz. © 1993.},

note = {cited By 16},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Boonkosum1993b,

title = {Amorphous Visible-Light Thin Film Light-Emitting Diode Having A-Sin:H As A Luminescent Layer},

author = {W Boonkosum and D Kruangam and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027575891&doi=10.1143%2fJJAP.32.1534&partnerID=40&md5=ae4d9bae6871cc30079224c07e603432},

doi = {10.1143/JJAP.32.1534},

issn = {00214922},

year  = {1993},

date = {1993-01-01},

journal = {Japanese Journal of Applied Physics},

volume = {32},

number = {4 R},

pages = {1534-1538},

abstract = {Hydrogenated amorphous silicon nitride (a-SiN:H) has been applied for the first time as a luminescent active layer (i-layer) in an amorphous visible-light thin film light-emitting diode (TFLED). The TFLED has the structure of glass substrate/lTO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. Visible red and yellow emissions can be observed at room temperature from the TFLEDs in which the optical energy gap of i-a-SiN:H is larger than 2.4 eV. The brightness of the red TFLED was 0.5 cd/m2, with a forward injection current density of 2000 mA/cm2for the 0.033 cm2 cell area. © 1993 The Japan Society of Applied Physics.},

note = {cited By 27},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Panyakeow1985,

title = {Double surface solar cells},

author = {S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0022303093&doi=10.1117%2f12.966306&partnerID=40&md5=a62bf729f457ee8e7b3a0b1aa0862a85},

doi = {10.1117/12.966306},

issn = {0277786X},

year  = {1985},

date = {1985-01-01},

journal = {Proceedings of SPIE - The International Society for Optical Engineering},

volume = {562},

pages = {193-200},

abstract = {Double Surface Solar Cell has a potential performance to reduce cost per watt for photovoltaic application. Pre-experiment by using two solar cells with back-to-back configuration was investigated. With combination of reflecting mirrors and tracking mechanism, the output gain of 1.8 was measured. The symmetrical structure of Double Surface Solar Cells is proposed and designed withiti the technical limitation of our facilities. © 1985 SPIE.},

note = {cited By 0},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Panyakeow1984,

title = {Appropriate technology for photovoltaic application in Thailand},

author = {S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-35348926692&doi=10.1016%2f0741-983X%2884%2990028-6&partnerID=40&md5=a82131c70e1470dc37619826c79777e9},

doi = {10.1016/0741-983X(84)90028-6},

issn = {0741983X},

year  = {1984},

date = {1984-01-01},

journal = {Solar and Wind Technology},

volume = {1},

number = {1},

pages = {9-14},

abstract = {The photovoltaic cell is considered to be a promising device for some special applications, such as communication networks, water pumping, educational television systems and so on in developing countries such as Thailand. However, the high cost and sophisticated fabrication techniques of photovoltaic cells seem to be the major barriers against its utilization in developing countries. Photovoltaic cells produced by developed countries should possess high efficiency of 10-15% in order to become economical under their manufacturing conditions, such as high investment in technological development, high rate of labour, raw materials, etc. Hopefully, development of appropriate technology for photovoltaic cell fabrication and application in developing countries will prove that it is possible to overcome such a barrier. The efficiency of 8-10% might be economical under appropriate conditions of developing countries, such as using local raw materials, low-cost and easy-to-fabricate techniques, etc. Several years have been spent in tracing the technical know-how of the photovoltaic cell fabrication process which has been conducted in developed countries, such as Japan, U.S.A. and France. It has been found that low quality of local consumable materials and local infrastructure degrade the efficiency of the cells. Therefore, photovoltaic research and development in Thailand must aim at the appropriate technology to serve the local need and to utilize the local resources. Paint-on diffusion at low temperature was investigated. This technique was used to produce a thin and heavily doped layer on silicon wafers. The impurity source is either P2O5 or B2O3 which is soluble in a suitable solvent. Anodic oxidation at room temperature was performed to achieve a passivation layer and peeled-off layer of silicon surface. Ohmic contact or Schottky contact was constructed by nickel electroless plating. Chemical vapor deposition of SnO2 was studied to produce anti-reflection and transparent electrodes of photovoltaic cells. SnO2 is considered to be an appropriate material because it is one of the abundunt national resources of Thailand. Photovoltaic cells fabricated by these techniques show a satisfactory efficiency of 5-10%. © 1984.},

note = {cited By 2},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kim1980,

title = {Electron transport in hydrogenated amorphous silicon prepared by rf sputtering},

author = {G I Kim and S Panyakeow and J Shirafuji and Y Inuishi},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84913340864&doi=10.7567%2fJJAPS.19S2.95&partnerID=40&md5=baa85a45ab784a7d66aa8830b493dcaa},

doi = {10.7567/JJAPS.19S2.95},

issn = {00214922},

year  = {1980},

date = {1980-01-01},

journal = {Japanese Journal of Applied Physics},

volume = {19},

pages = {95-98},

abstract = {Electrical and photoelectric properties of rf sputtered a-Si prepared under various deposition conditions have been studied. The a-Si films were deposited onto NESA coated glass substrates which serve as optical window for photoelectric measurements. The temperature dependence of the photoconductivity is tentatively understood on the model which includes two kinds of traps located near the conduction and valence bands. The photoconductivity and photovoltage are observed in the spectral region which is determined by the optical gap of a-Si and SnO2. It is confirmed experimentally that high photoconductivity is correlated closely to large photovoltage. © 1980 IOP Publishing Ltd.},

note = {cited By 1},

keywords = {},

pubstate = {published},

tppubtype = {article}

}