Professor Songphol Kanjanachuchai, Ph.D.
ศ. ดร.ทรงพล กาญจนชูชัย
Education
- Ph.D. Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, United Kingdom,1995-1999
- M.Eng. (First Class Honours) in Electrical and Electronic Engineering, Imperial College of Science, Technology and Medicine, University of London, United Kingdom,1991-1995
Email: Songphol.k@chula.ac.th
Research Interest
- semiconductors
- microelectronics
- crystal growth
- surfaces and interfaces
Research Cluster
Link to
26.
Kanjanachuchai, S; Euaruksakul, C
Directions and breakup of self-running in droplets on low-index InP surfaces Journal Article
In: Crystal Growth and Design, vol. 14, no. 2, pp. 830-834, 2014, ISSN: 15287483, (cited By 15).
@article{Kanjanachuchai2014,
title = {Directions and breakup of self-running in droplets on low-index InP surfaces},
author = {S Kanjanachuchai and C Euaruksakul},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84893647980&doi=10.1021%2fcg401693x&partnerID=40&md5=781f003f299b3d1b75dfcbdf95b7eda7},
doi = {10.1021/cg401693x},
issn = {15287483},
year = {2014},
date = {2014-01-01},
journal = {Crystal Growth and Design},
volume = {14},
number = {2},
pages = {830-834},
abstract = {The nucleation and dynamics of multiple generations of In droplets formed from Langmuir evaporation of InP (001), (111)A, and (111)B surfaces are reported. In situ mirror electron microscopy reveals that the majority of first-generation, or mother, droplets break up immediately before they run from the nucleation sites, leaving behind daughter droplets and etch trails where more droplets emerge. These subsequent droplets grow with time and run once a critical size is reached. The breakup and running characteristics are explained in terms of crystallography, viscosity, chemical potential, and temperature and will likely affect the growth processes and designs of various droplet-catalyzed nanostructures and devices. © 2013 American Chemical Society.},
note = {cited By 15},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The nucleation and dynamics of multiple generations of In droplets formed from Langmuir evaporation of InP (001), (111)A, and (111)B surfaces are reported. In situ mirror electron microscopy reveals that the majority of first-generation, or mother, droplets break up immediately before they run from the nucleation sites, leaving behind daughter droplets and etch trails where more droplets emerge. These subsequent droplets grow with time and run once a critical size is reached. The breakup and running characteristics are explained in terms of crystallography, viscosity, chemical potential, and temperature and will likely affect the growth processes and designs of various droplet-catalyzed nanostructures and devices. © 2013 American Chemical Society.
27.
Kanjanachuchai, S; Euaruksakul, C
Self-running Ga droplets on GaAs (111)A and (111)B surfaces Journal Article
In: ACS Applied Materials and Interfaces, vol. 5, no. 16, pp. 7709-7713, 2013, ISSN: 19448244, (cited By 28).
@article{Kanjanachuchai2013,
title = {Self-running Ga droplets on GaAs (111)A and (111)B surfaces},
author = {S Kanjanachuchai and C Euaruksakul},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84883292299&doi=10.1021%2fam402455u&partnerID=40&md5=f2b58af639ab046ae9f3a24b076e1857},
doi = {10.1021/am402455u},
issn = {19448244},
year = {2013},
date = {2013-01-01},
journal = {ACS Applied Materials and Interfaces},
volume = {5},
number = {16},
pages = {7709-7713},
abstract = {Thermal decomposition of GaAs (111)A and (111)B surfaces in ultrahigh vacuum results in self-running Ga droplets. Although Ga droplets on the (111)B surface run in one main direction, those on the (111)A surface run in multiple directions, frequently taking sharp turns and swerving around pyramidal etch pits, leaving behind mixed smooth-triangular trails as a result of simultaneous in-plane driving and out-of-plane crystallographic etching. The droplet motion is partially guided by dislocation strain fields. The results hint at the possibilities of using subsurface dislocation network and prepatterned, etched surfaces to control metallic droplet motion on single-crystal semiconductor surfaces. © 2013 American Chemical Society.},
note = {cited By 28},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Thermal decomposition of GaAs (111)A and (111)B surfaces in ultrahigh vacuum results in self-running Ga droplets. Although Ga droplets on the (111)B surface run in one main direction, those on the (111)A surface run in multiple directions, frequently taking sharp turns and swerving around pyramidal etch pits, leaving behind mixed smooth-triangular trails as a result of simultaneous in-plane driving and out-of-plane crystallographic etching. The droplet motion is partially guided by dislocation strain fields. The results hint at the possibilities of using subsurface dislocation network and prepatterned, etched surfaces to control metallic droplet motion on single-crystal semiconductor surfaces. © 2013 American Chemical Society.
28.
Limwongse, T; Thainoi, S; Panyakeow, S; Kanjanachuchai, S
InGaAs quantum dots on cross-hatch patterns as a host for diluted magnetic semiconductor medium Journal Article
In: Journal of Nanomaterials, vol. 2013, 2013, ISSN: 16874110, (cited By 0).
@article{Limwongse2013,
title = {InGaAs quantum dots on cross-hatch patterns as a host for diluted magnetic semiconductor medium},
author = {T Limwongse and S Thainoi and S Panyakeow and S Kanjanachuchai},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84880221792&doi=10.1155%2f2013%2f791782&partnerID=40&md5=b4818669ae76f73ee16e2d7a026f65f6},
doi = {10.1155/2013/791782},
issn = {16874110},
year = {2013},
date = {2013-01-01},
journal = {Journal of Nanomaterials},
volume = {2013},
abstract = {Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs) can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported. © 2013 Teeravat Limwongse et al.},
note = {cited By 0},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs) can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported. © 2013 Teeravat Limwongse et al.
29.
Chokamnuai, T; Rattanadon, P; Thainoi, S; Panyakeow, S; Kanjanachuchai, S
Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns Journal Article
In: Journal of Crystal Growth, vol. 378, pp. 524-528, 2013, ISSN: 00220248, (cited By 5).
@article{Chokamnuai2013,
title = {Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns},
author = {T Chokamnuai and P Rattanadon and S Thainoi and S Panyakeow and S Kanjanachuchai},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84885430984&doi=10.1016%2fj.jcrysgro.2012.12.092&partnerID=40&md5=92820a3dd46bf1aca29f5fcb0319067f},
doi = {10.1016/j.jcrysgro.2012.12.092},
issn = {00220248},
year = {2013},
date = {2013-01-01},
journal = {Journal of Crystal Growth},
volume = {378},
pages = {524-528},
publisher = {Elsevier B.V.},
abstract = {Stacked InAs quantum dots (QDs) are grown on InGaAs/GaAs cross-hatch patterns (CHPs) by molecular beam epitaxy. The QDs, found almost exclusively on the cross-hatches, have greater lateral aspect ratio and are taller than typical QDs on flat surfaces. Polarization-resolved photoluminescent measurements show that both the QDs and CHPs exhibit polarization anisotropy. But while the CHP-related anisotropy is constant, the QD-related anisotropy is significantly enhanced or suppressed as the aspect ratio and height of the QD ensemble vary with the number of stacks. The polarization anisotropy observed agrees well with multiband tight-binding theoretical calculations of interband polarization in InAs/GaAs QDs. © 2013 Elsevier B.V. All rights reserved.},
note = {cited By 5},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Stacked InAs quantum dots (QDs) are grown on InGaAs/GaAs cross-hatch patterns (CHPs) by molecular beam epitaxy. The QDs, found almost exclusively on the cross-hatches, have greater lateral aspect ratio and are taller than typical QDs on flat surfaces. Polarization-resolved photoluminescent measurements show that both the QDs and CHPs exhibit polarization anisotropy. But while the CHP-related anisotropy is constant, the QD-related anisotropy is significantly enhanced or suppressed as the aspect ratio and height of the QD ensemble vary with the number of stacks. The polarization anisotropy observed agrees well with multiband tight-binding theoretical calculations of interband polarization in InAs/GaAs QDs. © 2013 Elsevier B.V. All rights reserved.
30.
Patanasemakul, N; Panyakeow, S; Kanjanachuchai, S
Chirped IngaAs quantum dot molecules for broadband applications Journal Article
In: Nanoscale Research Letters, vol. 7, 2012, ISSN: 19317573, (cited By 1).
@article{Patanasemakul2012,
title = {Chirped IngaAs quantum dot molecules for broadband applications},
author = {N Patanasemakul and S Panyakeow and S Kanjanachuchai},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860674429&doi=10.1186%2f1556-276X-7-207&partnerID=40&md5=c82f9bbedf6bd6b64618cade4af402b0},
doi = {10.1186/1556-276X-7-207},
issn = {19317573},
year = {2012},
date = {2012-01-01},
journal = {Nanoscale Research Letters},
volume = {7},
publisher = {Springer New York LLC},
abstract = {Lateral InGaAs quantum dot molecules (QDMs) formed by partial-cap and regrowth technique exhibit two ground-state (GS) peaks controllable via the thicknesses of InAs seed quantum dots (x), GaAs cap (y), and InAs regrowth (z). By adjusting x/y/z in a stacked QDM bilayer, the GS peaks from the two layers can be offset to straddle, stagger, or join up with each other, resulting in multi-GS or broadband spectra. A non-optimized QDM bilayer with a 170-meV full-width at half-maximum is demonstrated. The temperature dependencies of the emission peak energies and intensities from the chirped QDM bilayers are well explained by Varshni's equation and thermal activation of carriers out of constituent quantum dots. © 2012 Patanasemakul et al.},
note = {cited By 1},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Lateral InGaAs quantum dot molecules (QDMs) formed by partial-cap and regrowth technique exhibit two ground-state (GS) peaks controllable via the thicknesses of InAs seed quantum dots (x), GaAs cap (y), and InAs regrowth (z). By adjusting x/y/z in a stacked QDM bilayer, the GS peaks from the two layers can be offset to straddle, stagger, or join up with each other, resulting in multi-GS or broadband spectra. A non-optimized QDM bilayer with a 170-meV full-width at half-maximum is demonstrated. The temperature dependencies of the emission peak energies and intensities from the chirped QDM bilayers are well explained by Varshni's equation and thermal activation of carriers out of constituent quantum dots. © 2012 Patanasemakul et al.
31.
Kanjanachuchai, S; Limwongse, T
Nucleation sequence of InAs quantum dots on cross-hatch patterns Journal Article
In: Journal of Nanoscience and Nanotechnology, vol. 11, no. 12, pp. 10787-10791, 2011, ISSN: 15334880, (cited By 7).
@article{Kanjanachuchai2011,
title = {Nucleation sequence of InAs quantum dots on cross-hatch patterns},
author = {S Kanjanachuchai and T Limwongse},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857176675&doi=10.1166%2fjnn.2011.3976&partnerID=40&md5=149aa780944940b7475375d8ec1c208d},
doi = {10.1166/jnn.2011.3976},
issn = {15334880},
year = {2011},
date = {2011-01-01},
journal = {Journal of Nanoscience and Nanotechnology},
volume = {11},
number = {12},
pages = {10787-10791},
abstract = {InAs quantum dots (QDs) are grown via molecular beam epitaxy on cross-hatch pattern (CHP) templates that result from lattice-mismatched epitaxy of In xGa 1-xAs on (100)-GaAs substrates. Growth of InAs on low-(x = 0.10) and medium-(x = 0.13) mismatch CHPs with InAs thickness grading from sub-to beyond critical thickness show different stages of QD nucleation that is dictated mainly by surface steps. Tangential surface stress fields arising from the buried network of 〈110〉 misfit dislocations (MDs) at the InGaAs/GaAs interface are simulated in two dimensions and found to have a direct correlation to QD height at various locations, implying sequential QD nucleation at the surface intersection of the glide plane of dislocation T-section, cross-hatch intersection, threading dislocation, [1-10] MD line, and [110] MD line, followed by nucleation on the flat areas. Deviations from this nominal sequence is possible due to material anisotropy and are accounted for in the stress calculation by dislocation-specific scaling factors. © 2011 American Scientific Publishers.},
note = {cited By 7},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
InAs quantum dots (QDs) are grown via molecular beam epitaxy on cross-hatch pattern (CHP) templates that result from lattice-mismatched epitaxy of In xGa 1-xAs on (100)-GaAs substrates. Growth of InAs on low-(x = 0.10) and medium-(x = 0.13) mismatch CHPs with InAs thickness grading from sub-to beyond critical thickness show different stages of QD nucleation that is dictated mainly by surface steps. Tangential surface stress fields arising from the buried network of 〈110〉 misfit dislocations (MDs) at the InGaAs/GaAs interface are simulated in two dimensions and found to have a direct correlation to QD height at various locations, implying sequential QD nucleation at the surface intersection of the glide plane of dislocation T-section, cross-hatch intersection, threading dislocation, [1-10] MD line, and [110] MD line, followed by nucleation on the flat areas. Deviations from this nominal sequence is possible due to material anisotropy and are accounted for in the stress calculation by dislocation-specific scaling factors. © 2011 American Scientific Publishers.
32.
Himwas, C; Panyakeow, S; Kanjanachuchai, S
Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns Journal Article
In: Nanoscale Research Letters, vol. 6, pp. 1-7, 2011, ISSN: 19317573, (cited By 6).
@article{Himwas2011a,
title = {Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns},
author = {C Himwas and S Panyakeow and S Kanjanachuchai},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84856034404&doi=10.1186%2f1556-276X-6-496&partnerID=40&md5=37fb67393561d945fb6c2d8975b9016f},
doi = {10.1186/1556-276X-6-496},
issn = {19317573},
year = {2011},
date = {2011-01-01},
journal = {Nanoscale Research Letters},
volume = {6},
pages = {1-7},
abstract = {InAs quantum dots (QDs) grown on InGaAs cross-hatch pattern (CHP) by molecular beam epitaxy are characterized by photoluminescence (PL) at 20 K. In contrast to QDs grown on flat GaAs substrates, those grown on CHPs exhibit rich optical features which comprise as many as five ground-state emissions from [1-10]- and [110]-aligned QDs, two wetting layers (WLs), and the CHP. When subject to in situ annealing at 700°C, the PL signals rapidly degrades due to the deterioration of the CHP which sets the upper limit of overgrowth temperature. Ex situ hydrogen annealing at a much lower temperature of 350°C, however, results in an overall PL intensity increase with a significant narrowing and a small blueshift of the high-energy WL emission due to hydrogen bonding which neutralizes defects and relieves associated strains. © 2011 Himwas et al.},
note = {cited By 6},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
InAs quantum dots (QDs) grown on InGaAs cross-hatch pattern (CHP) by molecular beam epitaxy are characterized by photoluminescence (PL) at 20 K. In contrast to QDs grown on flat GaAs substrates, those grown on CHPs exhibit rich optical features which comprise as many as five ground-state emissions from [1-10]- and [110]-aligned QDs, two wetting layers (WLs), and the CHP. When subject to in situ annealing at 700°C, the PL signals rapidly degrades due to the deterioration of the CHP which sets the upper limit of overgrowth temperature. Ex situ hydrogen annealing at a much lower temperature of 350°C, however, results in an overall PL intensity increase with a significant narrowing and a small blueshift of the high-energy WL emission due to hydrogen bonding which neutralizes defects and relieves associated strains. © 2011 Himwas et al.
33.
Thongkamkoon, N; Patanasemakul, N; Siripitakchai, N; Thainoi, S; Panyakeow, S; Kanjanachuchai, S
Bimodal optical characteristics of lateral InGaAs quantum dot molecules Journal Article
In: Journal of Crystal Growth, vol. 323, no. 1, pp. 206-210, 2011, ISSN: 00220248, (cited By 3).
@article{Thongkamkoon2011,
title = {Bimodal optical characteristics of lateral InGaAs quantum dot molecules},
author = {N Thongkamkoon and N Patanasemakul and N Siripitakchai and S Thainoi and S Panyakeow and S Kanjanachuchai},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958010018&doi=10.1016%2fj.jcrysgro.2010.11.104&partnerID=40&md5=3b0e0cf317bc0e8265534034d9ed041d},
doi = {10.1016/j.jcrysgro.2010.11.104},
issn = {00220248},
year = {2011},
date = {2011-01-01},
journal = {Journal of Crystal Growth},
volume = {323},
number = {1},
pages = {206-210},
abstract = {Lateral InGaAs quantum dot molecules (QDMs) formed by thin-cap-and-regrowth molecular beam epitaxial technique comprise large, central quantum dots (cQDs) and small, satellite quantum dots (sQDs) in close proximity. Temperature-dependent photoluminescent (PL) measurements show that the bimodal size distribution gives rise to bimodal optical characteristics: the cQDs ground-state (GS) emissions vary slowly with temperature while the full-width at half maximum (FWHM) remains almost constant; the sQDs GS emissions, on the other hand, exhibit a sigmoidal temperature shift while the FWHM shows an anomalous temperature behaviour. The bimodal optical characteristics are well described in the existing framework of spatially localised excitons in QDs and inter- and intramolecular carrier redistributions in each and among the QDMs via non-resonant multi-phonon assisted mechanisms. © 2010 Elsevier B.V. All rights reserved.},
note = {cited By 3},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Lateral InGaAs quantum dot molecules (QDMs) formed by thin-cap-and-regrowth molecular beam epitaxial technique comprise large, central quantum dots (cQDs) and small, satellite quantum dots (sQDs) in close proximity. Temperature-dependent photoluminescent (PL) measurements show that the bimodal size distribution gives rise to bimodal optical characteristics: the cQDs ground-state (GS) emissions vary slowly with temperature while the full-width at half maximum (FWHM) remains almost constant; the sQDs GS emissions, on the other hand, exhibit a sigmoidal temperature shift while the FWHM shows an anomalous temperature behaviour. The bimodal optical characteristics are well described in the existing framework of spatially localised excitons in QDs and inter- and intramolecular carrier redistributions in each and among the QDMs via non-resonant multi-phonon assisted mechanisms. © 2010 Elsevier B.V. All rights reserved.
34.
Tantiweerasophon, W; Thainoi, S; Changmuang, P; Kanjanachuchai, S; Rattanathammaphan, S; Panyakeow, S
Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates Journal Article
In: Journal of Crystal Growth, vol. 323, no. 1, pp. 254-258, 2011, ISSN: 00220248, (cited By 7).
@article{Tantiweerasophon2011,
title = {Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates},
author = {W Tantiweerasophon and S Thainoi and P Changmuang and S Kanjanachuchai and S Rattanathammaphan and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-79957982711&doi=10.1016%2fj.jcrysgro.2010.12.083&partnerID=40&md5=98f411eae4dca644ea45c27da833888f},
doi = {10.1016/j.jcrysgro.2010.12.083},
issn = {00220248},
year = {2011},
date = {2011-01-01},
journal = {Journal of Crystal Growth},
volume = {323},
number = {1},
pages = {254-258},
abstract = {The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with GaAs thickness of 300 and 700 nm show non-uniformed size distribution of the dots. Due to anisotropic property of quantum dots, ellipsoidal quantum dots appear. Unexpectedly, most of InAs quantum dots align perpendicularly to anti-phase boundary (APB) and to quantum dot alignment formed in adjacent domains. Photoluminescence spectrum excited by 20 mW 476-nm Ar laser at 20 K does not show emission peak of InAs QDs. This is due to defects in the GaAs buffer layer. © 2010 Elsevier B.V. All rights reserved.},
note = {cited By 7},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with GaAs thickness of 300 and 700 nm show non-uniformed size distribution of the dots. Due to anisotropic property of quantum dots, ellipsoidal quantum dots appear. Unexpectedly, most of InAs quantum dots align perpendicularly to anti-phase boundary (APB) and to quantum dot alignment formed in adjacent domains. Photoluminescence spectrum excited by 20 mW 476-nm Ar laser at 20 K does not show emission peak of InAs QDs. This is due to defects in the GaAs buffer layer. © 2010 Elsevier B.V. All rights reserved.
35.
Laouthaiwattana, K; Tangmattajittakul, O; Suraprapapich, S; Thainoi, S; Changmuang, P; Kanjanachuchai, S; Ratanathamaphan, S; Panyakeow, S
Optimization of stacking high-density quantum dot molecules for photovoltaic effect Journal Article
In: Solar Energy Materials and Solar Cells, vol. 93, no. 6-7, pp. 746-749, 2009, ISSN: 09270248, (cited By 20).
@article{Laouthaiwattana2009,
title = {Optimization of stacking high-density quantum dot molecules for photovoltaic effect},
author = {K Laouthaiwattana and O Tangmattajittakul and S Suraprapapich and S Thainoi and P Changmuang and S Kanjanachuchai and S Ratanathamaphan and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349150757&doi=10.1016%2fj.solmat.2008.09.020&partnerID=40&md5=8c52a05098ea229a5b906fbc109f2ed3},
doi = {10.1016/j.solmat.2008.09.020},
issn = {09270248},
year = {2009},
date = {2009-01-01},
journal = {Solar Energy Materials and Solar Cells},
volume = {93},
number = {6-7},
pages = {746-749},
abstract = {Using a modified molecular beam epitaxial (MBE) process called thin-capping-and-regrowth technique we grew quantum dot molecule (QDM) structures having high dot volume density (greater than 1012 cm-3) and thus suitable as an active layer for effective photovoltaic energy conversion. Stacking of QDMs is time consuming and may introduce defects; therefore, optimization of stack number of QDMs is important in terms of achieving high-performance and low-cost solar cells. Samples with 1, 3, 5, 7 and 10 stacks of high-density QDMs are grown, fabricated into solar cells and characterized optically and electrically. It is found that the solar cell performance initially improves with the number of stacks, yet deteriorates once the number exceeds 5 stacks. We attribute the deterioration to defects and these put the optimized number of QDM stacks in our structure to 3-5. © 2008 Elsevier B.V. All rights reserved.},
note = {cited By 20},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Using a modified molecular beam epitaxial (MBE) process called thin-capping-and-regrowth technique we grew quantum dot molecule (QDM) structures having high dot volume density (greater than 1012 cm-3) and thus suitable as an active layer for effective photovoltaic energy conversion. Stacking of QDMs is time consuming and may introduce defects; therefore, optimization of stack number of QDMs is important in terms of achieving high-performance and low-cost solar cells. Samples with 1, 3, 5, 7 and 10 stacks of high-density QDMs are grown, fabricated into solar cells and characterized optically and electrically. It is found that the solar cell performance initially improves with the number of stacks, yet deteriorates once the number exceeds 5 stacks. We attribute the deterioration to defects and these put the optimized number of QDM stacks in our structure to 3-5. © 2008 Elsevier B.V. All rights reserved.
36.
Swe, N C; Tangmattajittakul, O; Suraprapapich, S; Changmoang, P; Thainoi, S; Wissawinthanon, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 26, no. 3, pp. 1100-1104, 2008, ISSN: 10711023, (cited By 3).
@article{Swe2008,
title = {Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAsGaAs quantum well structures by molecular beam epitaxy},
author = {N C Swe and O Tangmattajittakul and S Suraprapapich and P Changmoang and S Thainoi and C Wissawinthanon and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-44649158210&doi=10.1116%2f1.2835064&partnerID=40&md5=b01ab372f6260712583b3c271e795c30},
doi = {10.1116/1.2835064},
issn = {10711023},
year = {2008},
date = {2008-01-01},
journal = {Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures},
volume = {26},
number = {3},
pages = {1100-1104},
abstract = {Self-assembled, multistack InAs quantum dot molecules (QDMs) were grown by a modified molecular beam epitaxial (MBE) technique, which involves multiple stacking and multiple cycling of the thin-capping-and-regrowth process, so as to obtain a large volume density of quantum dots on the sample. Furthermore, the high-density InAs QDMs were also grown sandwiched either between a double heterostructure (DHS) or between a quantum-well (QW) structure. It was found from microphotoluminescence (μ -PL) measurements that the QDMs sandwiched between these structures give broader PL spectra than those of the as-grown QDMs. The broadening of the PL spectra is associated with the poorer dot size uniformity, which arises from the long and complicated MBE growth processes. However, comparing between the QDMs in the DHS and in the QW structure, the latter give narrower PL spectra. The narrower PL spectra for the QDM-in-QW structure is attributed to the improved quantum confinement effect arising from the use of the QW. © 2008 American Vacuum Society.},
note = {cited By 3},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Self-assembled, multistack InAs quantum dot molecules (QDMs) were grown by a modified molecular beam epitaxial (MBE) technique, which involves multiple stacking and multiple cycling of the thin-capping-and-regrowth process, so as to obtain a large volume density of quantum dots on the sample. Furthermore, the high-density InAs QDMs were also grown sandwiched either between a double heterostructure (DHS) or between a quantum-well (QW) structure. It was found from microphotoluminescence (μ -PL) measurements that the QDMs sandwiched between these structures give broader PL spectra than those of the as-grown QDMs. The broadening of the PL spectra is associated with the poorer dot size uniformity, which arises from the long and complicated MBE growth processes. However, comparing between the QDMs in the DHS and in the QW structure, the latter give narrower PL spectra. The narrower PL spectra for the QDM-in-QW structure is attributed to the improved quantum confinement effect arising from the use of the QW. © 2008 American Vacuum Society.
37.
Thet, C C; Sanorpim, S; Panyakeow, S; Kanjanachuchai, S
The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots Journal Article
In: Semiconductor Science and Technology, vol. 23, no. 5, 2008, ISSN: 02681242, (cited By 7).
@article{Thet2008,
title = {The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots},
author = {C C Thet and S Sanorpim and S Panyakeow and S Kanjanachuchai},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-43149116326&doi=10.1088%2f0268-1242%2f23%2f5%2f055007&partnerID=40&md5=04f385247714ba0b1337a8f7b3eb89be},
doi = {10.1088/0268-1242/23/5/055007},
issn = {02681242},
year = {2008},
date = {2008-01-01},
journal = {Semiconductor Science and Technology},
volume = {23},
number = {5},
abstract = {Self-assembled InAs quantum dots (QDs) are grown on InGaAs/GaAs virtual substrates (VS) by molecular beam epitaxy. By growing InAs QDs on partially relaxed InGaAs layers with different thicknesses, hence with varying degrees of relaxation, we obtain InAs QDs which are aligned or grouped into distinct units. It was found that growths of InAs QDs on these VS result in preferential alignment along [1 1 0] and [1 -1 0] directions, and the thicker the InGaAs relaxed layer the higher the chance that QDs coalesce into distinct ensembles of QDs. We attribute the results to the difference in the underlying surface undulation due to different degrees of VS relaxation and to strain asymmetries, as confirmed by atomic force microscopy and high-resolution x-ray diffraction. A schematic description of InAs QD growth on partially relaxed InGaAs layers is given. © 2008 IOP Publishing Ltd.},
note = {cited By 7},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Self-assembled InAs quantum dots (QDs) are grown on InGaAs/GaAs virtual substrates (VS) by molecular beam epitaxy. By growing InAs QDs on partially relaxed InGaAs layers with different thicknesses, hence with varying degrees of relaxation, we obtain InAs QDs which are aligned or grouped into distinct units. It was found that growths of InAs QDs on these VS result in preferential alignment along [1 1 0] and [1 -1 0] directions, and the thicker the InGaAs relaxed layer the higher the chance that QDs coalesce into distinct ensembles of QDs. We attribute the results to the difference in the underlying surface undulation due to different degrees of VS relaxation and to strain asymmetries, as confirmed by atomic force microscopy and high-resolution x-ray diffraction. A schematic description of InAs QD growth on partially relaxed InGaAs layers is given. © 2008 IOP Publishing Ltd.
38.
Suraprapapich, S; Thainoi, S; Kanjanachuchai, S; Panyakeow, S
Self-assembled InAs lateral quantum dot molecules growth on (001) GaAs by thin-capping-and-regrowth MBE technique Journal Article
In: Solid State Phenomena, vol. 121-123, no. PART 1, pp. 395-400, 2007, ISSN: 10120394, (cited By 0; Conference of China International Conference on Nanoscience and Technology, ChinaNANO 2005 ; Conference Date: 9 June 2005 Through 11 June 2005; Conference Code:71325).
@article{Suraprapapich2007,
title = {Self-assembled InAs lateral quantum dot molecules growth on (001) GaAs by thin-capping-and-regrowth MBE technique},
author = {S Suraprapapich and S Thainoi and S Kanjanachuchai and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-38549178082&doi=10.4028%2f3-908451-30-2.395&partnerID=40&md5=86a786ec19b2aecfe4a711dfa4c8ec0c},
doi = {10.4028/3-908451-30-2.395},
issn = {10120394},
year = {2007},
date = {2007-01-01},
journal = {Solid State Phenomena},
volume = {121-123},
number = {PART 1},
pages = {395-400},
publisher = {Trans Tech Publications Ltd},
address = {Beijing},
abstract = {InAs lateral quantum dot molecules (QDMs) are grown on (001)-GaAs substrates. The self-assembled QDMs are formed in one continuous molecular beam epitaxial (MBE) growth via a thin-capping-and-regrowth technique. Lateral QDMs, each with 10-12 dots arranged in a specific pattern, are determined by the shapes of the underlying nanopropeller quantum dots (QDs). The nanopropeller QDs in turn are obtained by regrowth on nano-holes which have been previously created by capping the first InAs QD layer grown on (001)-GaAs substrate with a thin GaAs layer. The length of the propeller directly influences the number of QDs in a QDM. By varying the conditions for thin-capping, shorter or longer propellers can be achieved, allowing the number of QDs in each QDM to be controlled.},
note = {cited By 0; Conference of China International Conference on Nanoscience and Technology, ChinaNANO 2005 ; Conference Date: 9 June 2005 Through 11 June 2005; Conference Code:71325},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
InAs lateral quantum dot molecules (QDMs) are grown on (001)-GaAs substrates. The self-assembled QDMs are formed in one continuous molecular beam epitaxial (MBE) growth via a thin-capping-and-regrowth technique. Lateral QDMs, each with 10-12 dots arranged in a specific pattern, are determined by the shapes of the underlying nanopropeller quantum dots (QDs). The nanopropeller QDs in turn are obtained by regrowth on nano-holes which have been previously created by capping the first InAs QD layer grown on (001)-GaAs substrate with a thin GaAs layer. The length of the propeller directly influences the number of QDs in a QDM. By varying the conditions for thin-capping, shorter or longer propellers can be achieved, allowing the number of QDs in each QDM to be controlled.
39.
Suraprapapich, S; Thainoi, S; Kanjanachuchai, S; Panyakeow, S
Thin-capping-and-regrowth molecular beam epitaxial technique for quantum dots and quantum-dot molecules Journal Article
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 3, pp. 1665-1667, 2006, ISSN: 10711023, (cited By 7).
@article{Suraprapapich2006a,
title = {Thin-capping-and-regrowth molecular beam epitaxial technique for quantum dots and quantum-dot molecules},
author = {S Suraprapapich and S Thainoi and S Kanjanachuchai and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33744825213&doi=10.1116%2f1.2190666&partnerID=40&md5=1e8c086a6988d4961ca97daa1b509848},
doi = {10.1116/1.2190666},
issn = {10711023},
year = {2006},
date = {2006-01-01},
journal = {Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures},
volume = {24},
number = {3},
pages = {1665-1667},
abstract = {A thin-capping-and-regrowth molecular beam epitaxial technique is proposed and demonstrated to be a suitable approach for the growth of lateral quantum-dot molecules (QDMs). By regrowing on top of nanoholes, previously formed from as-grown quantum dots (QDs) via a thin-capping process, nanopropeller QDs are formed. By repeating the thin-capping-and-regrowth process for several cycles at the regrown thickness of 0.6 ML, nanopropeller QDs are linked along the [1 1- 0] crystallographic direction, leading to the alignment of QDs. The thin-capping-and-regrowth process is repeated for 1, 3, 5, 7, and 10 cycles on different samples for comparison purposes. It is found from ex situ atomic force microscopy that at 7 cycles of thin capping and regrowth of QDs, the best alignment of QDs is achieved. This is due to the strain having an optimum condition. The samples that undergo three and five thin-capping-and-regrowth cycles show some randomness of QD formation. When the process is repeated for 10 cycles, QDs become randomly distributed, but with a higher dot density than the as-grown sample. The high dot density results in a strong photoluminescence at room temperature. It is also shown that when self-aligned QDs are used as templates, aligned QDMs can be obtained at a regrowth thickness of 1.2 ML. © 2006 American Vacuum Society.},
note = {cited By 7},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
A thin-capping-and-regrowth molecular beam epitaxial technique is proposed and demonstrated to be a suitable approach for the growth of lateral quantum-dot molecules (QDMs). By regrowing on top of nanoholes, previously formed from as-grown quantum dots (QDs) via a thin-capping process, nanopropeller QDs are formed. By repeating the thin-capping-and-regrowth process for several cycles at the regrown thickness of 0.6 ML, nanopropeller QDs are linked along the [1 1- 0] crystallographic direction, leading to the alignment of QDs. The thin-capping-and-regrowth process is repeated for 1, 3, 5, 7, and 10 cycles on different samples for comparison purposes. It is found from ex situ atomic force microscopy that at 7 cycles of thin capping and regrowth of QDs, the best alignment of QDs is achieved. This is due to the strain having an optimum condition. The samples that undergo three and five thin-capping-and-regrowth cycles show some randomness of QD formation. When the process is repeated for 10 cycles, QDs become randomly distributed, but with a higher dot density than the as-grown sample. The high dot density results in a strong photoluminescence at room temperature. It is also shown that when self-aligned QDs are used as templates, aligned QDMs can be obtained at a regrowth thickness of 1.2 ML. © 2006 American Vacuum Society.
40.
Suraprapapich, S; Kanjanachuchai, S; Thainoi, S; Panyakeow, S
Self-assembled lateral InAs quantum dot molecules: Dot ensemble control and polarization-dependent photoluminescence Journal Article
In: Microelectronic Engineering, vol. 83, no. 4-9 SPEC. ISS., pp. 1526-1529, 2006, ISSN: 01679317, (cited By 4).
@article{Suraprapapich2006b,
title = {Self-assembled lateral InAs quantum dot molecules: Dot ensemble control and polarization-dependent photoluminescence},
author = {S Suraprapapich and S Kanjanachuchai and S Thainoi and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33646059186&doi=10.1016%2fj.mee.2006.01.191&partnerID=40&md5=93bf6cc3f1387e7f7b53baaf6456b399},
doi = {10.1016/j.mee.2006.01.191},
issn = {01679317},
year = {2006},
date = {2006-01-01},
journal = {Microelectronic Engineering},
volume = {83},
number = {4-9 SPEC. ISS.},
pages = {1526-1529},
abstract = {By proper control of underlying templates, lateral InAs quantum dot molecules (QDMs) can be grown with a desired number of quantum dots (QDs) per molecule. We demonstrate that by capping as-grown InAs QDs with lattice-mismatched GaAs layer and by varying the capping temperature between 430 and 470 °C, we are able to control the span of nanoholes template to between 150 and 300 nm. InAs regrowth on this template result in nanopropellers (0.6 ML regrowth) or QDMs (1.2 ML), the latter with 4-12 QDs per molecule depending on the span of the underlying nanoholes template. All QDM samples grown share a characteristic feature with a clear preference to orient along the [ 1 over(1, ̄) 0 ] crystallographic direction. Room-temperature photoluminescence measurements show a strong polarization-dependent characteristic, in good agreements with the QDM's geometry. © 2006 Elsevier B.V. All rights reserved.},
note = {cited By 4},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
By proper control of underlying templates, lateral InAs quantum dot molecules (QDMs) can be grown with a desired number of quantum dots (QDs) per molecule. We demonstrate that by capping as-grown InAs QDs with lattice-mismatched GaAs layer and by varying the capping temperature between 430 and 470 °C, we are able to control the span of nanoholes template to between 150 and 300 nm. InAs regrowth on this template result in nanopropellers (0.6 ML regrowth) or QDMs (1.2 ML), the latter with 4-12 QDs per molecule depending on the span of the underlying nanoholes template. All QDM samples grown share a characteristic feature with a clear preference to orient along the [ 1 over(1, ̄) 0 ] crystallographic direction. Room-temperature photoluminescence measurements show a strong polarization-dependent characteristic, in good agreements with the QDM's geometry. © 2006 Elsevier B.V. All rights reserved.
41.
Suraprapapich, S; Kanjanachuchai, S; Thainoi, S; Panyakeow, S
Regrowth of self-assembled InAs quantum dots on nanohole and stripe templates Journal Article
In: Journal of Microlithography, Microfabrication and Microsystems, vol. 5, no. 1, 2006, ISSN: 15371646, (cited By 2).
@article{Suraprapapich2006,
title = {Regrowth of self-assembled InAs quantum dots on nanohole and stripe templates},
author = {S Suraprapapich and S Kanjanachuchai and S Thainoi and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748533461&doi=10.1117%2f1.2177287&partnerID=40&md5=2b92606f21b6c9d163f1dbe3468813ed},
doi = {10.1117/1.2177287},
issn = {15371646},
year = {2006},
date = {2006-01-01},
journal = {Journal of Microlithography, Microfabrication and Microsystems},
volume = {5},
number = {1},
abstract = {Self-assembled InAs quantum dots (QDs) are grown on two types of templates by molecular beam epitaxy (MBE). A nanohole template is prepared by first growing InAs QDs on a GaAs substrate by a standard MBE process, then capping the QDs with a thin latticemismatched layer of GaAs. Subsequent annealing of the nanohole template results in a stripe template. We are able to transfer the patterns of self-assembled QDs onto these two types of templates: regrowth on the nanohole template results in uniform QDs situated in the nanoholes, while regrowth on the stripe template results in chains of QDs aligned along the stripes. Our results imply that self-assembled QDs can be grown onto in-situ prepared patterned substrates, with limited degree of randomness. © 2006 Society of Photo-Optical Instrumentation Engineers.},
note = {cited By 2},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Self-assembled InAs quantum dots (QDs) are grown on two types of templates by molecular beam epitaxy (MBE). A nanohole template is prepared by first growing InAs QDs on a GaAs substrate by a standard MBE process, then capping the QDs with a thin latticemismatched layer of GaAs. Subsequent annealing of the nanohole template results in a stripe template. We are able to transfer the patterns of self-assembled QDs onto these two types of templates: regrowth on the nanohole template results in uniform QDs situated in the nanoholes, while regrowth on the stripe template results in chains of QDs aligned along the stripes. Our results imply that self-assembled QDs can be grown onto in-situ prepared patterned substrates, with limited degree of randomness. © 2006 Society of Photo-Optical Instrumentation Engineers.
42.
Suraprapapich, S; Thainoi, S; Kanjanachuchai, S; Panyakeow, S
Self-assembled quantum-dot molecules by molecular-beam epitaxy Journal Article
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 3, pp. 1217-1220, 2005, ISSN: 10711023, (cited By 29).
@article{Suraprapapich2005,
title = {Self-assembled quantum-dot molecules by molecular-beam epitaxy},
author = {S Suraprapapich and S Thainoi and S Kanjanachuchai and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-28244483878&doi=10.1116%2f1.1894417&partnerID=40&md5=8fe76b60e2e035123aafd589b0ad3db9},
doi = {10.1116/1.1894417},
issn = {10711023},
year = {2005},
date = {2005-01-01},
journal = {Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures},
volume = {23},
number = {3},
pages = {1217-1220},
abstract = {Self-assembled InAs quantum-dot (QD) molecules having high dot density and aligned dot set structure, which is defined by nanotemplates, were realized by thin capping and regrowth technique in a molecular-beam epitaxy process. Thin capping of GaAs on InAs QDs leads to the creation of nanoholes having a camel-like nanostructure due to anisotropic strain fields along the [1 1- 0] crystallographic direction and anisotropic surface diffusion accompanying the QD collapse. Regrowth of InAs QDs on the nanohole templates initially results in the formation of QDs with good size uniformity in the middle of features with the shape of propeller blades. This takes place at the regrowth thickness of 0.6 monolayer (ML). The strain at propellers' edge starts to play its role, creating sets of quantum dots surrounding the initial and centered dots at the regrowth thickness of 1.2 ML. The elongated configuration of propellers' blades defines the pattern of QD sets having five to six dots on each side. The dot density of the QD molecules is 3× 1010 cm-2, one order of magnitude higher than that of initial dot density (2× 109 cm-2). © 2005 American Vacuum Society.},
note = {cited By 29},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Self-assembled InAs quantum-dot (QD) molecules having high dot density and aligned dot set structure, which is defined by nanotemplates, were realized by thin capping and regrowth technique in a molecular-beam epitaxy process. Thin capping of GaAs on InAs QDs leads to the creation of nanoholes having a camel-like nanostructure due to anisotropic strain fields along the [1 1- 0] crystallographic direction and anisotropic surface diffusion accompanying the QD collapse. Regrowth of InAs QDs on the nanohole templates initially results in the formation of QDs with good size uniformity in the middle of features with the shape of propeller blades. This takes place at the regrowth thickness of 0.6 monolayer (ML). The strain at propellers' edge starts to play its role, creating sets of quantum dots surrounding the initial and centered dots at the regrowth thickness of 1.2 ML. The elongated configuration of propellers' blades defines the pattern of QD sets having five to six dots on each side. The dot density of the QD molecules is 3× 1010 cm-2, one order of magnitude higher than that of initial dot density (2× 109 cm-2). © 2005 American Vacuum Society.
43.
Suraprapapich, S; Thainoi, S; Laliew, C; Kanjanachuchai, S; Panyakeow, S
Self-assembled indium-arsenide elongated nanostructure grown by molecular beam epitaxy Journal Article
In: International Journal of Nanoscience, vol. 4, no. 2, pp. 253-259, 2005, ISSN: 0219581X, (cited By 1).
@article{Suraprapapich2005a,
title = {Self-assembled indium-arsenide elongated nanostructure grown by molecular beam epitaxy},
author = {S Suraprapapich and S Thainoi and C Laliew and S Kanjanachuchai and S Panyakeow},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-21144447441&doi=10.1142%2fS0219581X05003012&partnerID=40&md5=44b39e3c368f0649732a53afa198e2a3},
doi = {10.1142/S0219581X05003012},
issn = {0219581X},
year = {2005},
date = {2005-01-01},
journal = {International Journal of Nanoscience},
volume = {4},
number = {2},
pages = {253-259},
abstract = {Self-assembled InAs elongated nanostructures were fabricated by continuous processing steps, starting from self-assembling of quantum dots, thin capping over the quantum dots to induce an anisotropic strain field, and to anneal the quantum dots in the molecular-beam-epitaxy machine. In-situ RHEED observations at each processing step were studied and confirmed by ex-situ AFM images of the surface morphology. The elongated nanostructures were demonstrated to be templates for chains of uniform quantum dots. © World Scientific Publishing Company.},
note = {cited By 1},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Self-assembled InAs elongated nanostructures were fabricated by continuous processing steps, starting from self-assembling of quantum dots, thin capping over the quantum dots to induce an anisotropic strain field, and to anneal the quantum dots in the molecular-beam-epitaxy machine. In-situ RHEED observations at each processing step were studied and confirmed by ex-situ AFM images of the surface morphology. The elongated nanostructures were demonstrated to be templates for chains of uniform quantum dots. © World Scientific Publishing Company.
44.
Suraprapapich, S; Kanjanachuchai, S; Thainoi, S; Panyakeow, S
Ordered quantum dots formation on engineered template by molecular beam epitaxy Journal Article
In: Microelectronic Engineering, vol. 78-79, no. 1-4, pp. 349-352, 2005, ISSN: 01679317, (cited By 4; Conference of Proceedings of the 30th International Conference on Micro- and Nano-Engineering ; Conference Date: 19 September 2004 Through 22 September 2004; Conference Code:64391).
@article{Suraprapapich2005b,
title = {Ordered quantum dots formation on engineered template by molecular beam epitaxy},
author = {S Suraprapapich and S Kanjanachuchai and S Thainoi and S Panyakeow},
editor = {Drift E W J M Kruit P.},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-14944358228&doi=10.1016%2fj.mee.2004.12.046&partnerID=40&md5=97bb89cadd385de23809b74aaab4a48c},
doi = {10.1016/j.mee.2004.12.046},
issn = {01679317},
year = {2005},
date = {2005-01-01},
journal = {Microelectronic Engineering},
volume = {78-79},
number = {1-4},
pages = {349-352},
abstract = {We have achieved partial ordering of InAs quantum dots (QDs) grown on a flat GaAs (0 0 1) substrate. Although the growth of the first QD layer results in random distribution of QDs, subsequent processes that involve multiple cycles of capping, regrowth and annealing have turned the flat substrate into a template with stripes in the [11̄0] direction. Regrowth on the engineered template results in chains of relatively uniform InAs QDs connected in series. © 2005 Elsevier B.V. All rights reserved.},
note = {cited By 4; Conference of Proceedings of the 30th International Conference on Micro- and Nano-Engineering ; Conference Date: 19 September 2004 Through 22 September 2004; Conference Code:64391},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We have achieved partial ordering of InAs quantum dots (QDs) grown on a flat GaAs (0 0 1) substrate. Although the growth of the first QD layer results in random distribution of QDs, subsequent processes that involve multiple cycles of capping, regrowth and annealing have turned the flat substrate into a template with stripes in the [11̄0] direction. Regrowth on the engineered template results in chains of relatively uniform InAs QDs connected in series. © 2005 Elsevier B.V. All rights reserved.
45.
Kanjanachuchai, S; Tsuchiya, Y; Usami, K; Oda, S
Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy Journal Article
In: Microelectronic Engineering, vol. 73-74, pp. 615-619, 2004, ISSN: 01679317, (cited By 1; Conference of Micro and Nano Engineering 2003 ; Conference Date: 22 September 2003 Through 25 September 2003; Conference Code:62992).
@article{Kanjanachuchai2004,
title = {Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy},
author = {S Kanjanachuchai and Y Tsuchiya and K Usami and S Oda},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-2542473703&doi=10.1016%2fS0167-9317%2804%2900170-4&partnerID=40&md5=35183a927078c6b4e98aed7026e1c93a},
doi = {10.1016/S0167-9317(04)00170-4},
issn = {01679317},
year = {2004},
date = {2004-01-01},
journal = {Microelectronic Engineering},
volume = {73-74},
pages = {615-619},
publisher = {Elsevier},
address = {Cambridge},
abstract = {Silicon nanocrystals in the scale of 10 nm have been grown using very-high-frequency chemical vapour deposition technique. While dot sizes could be well controlled, their distribution on silicon surface was found to be random. The as-grown nanocrystal Si dots do not adhere well to the substrate. It was found that non-contact probing of the surface using tapping-mode atomic force microscopy resulted in dot displacement. In speed-controlled experiments, dots can be relocated as far as 200 nm from their original locations. Furthermore, small surface structures can also be displaced. © 2004 Elsevier B.V. All rights reserved.},
note = {cited By 1; Conference of Micro and Nano Engineering 2003 ; Conference Date: 22 September 2003 Through 25 September 2003; Conference Code:62992},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Silicon nanocrystals in the scale of 10 nm have been grown using very-high-frequency chemical vapour deposition technique. While dot sizes could be well controlled, their distribution on silicon surface was found to be random. The as-grown nanocrystal Si dots do not adhere well to the substrate. It was found that non-contact probing of the surface using tapping-mode atomic force microscopy resulted in dot displacement. In speed-controlled experiments, dots can be relocated as far as 200 nm from their original locations. Furthermore, small surface structures can also be displaced. © 2004 Elsevier B.V. All rights reserved.